for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 126 hmc451lc3 gaas phemt mmic medium power amplifier, 5 - 20 ghz v04.1208 general description features functional diagram the hmc451lc3 is an efficient gaas phemt mmic medium power ampli er housed in a leadless rohs compliant smt package. operating between 5 and 20 ghz, the ampli er provides 19 db of gain, +21 dbm of saturated power and 21% pae from a single +5v supply. this 50 ohm matched ampli er does not require any external components and the rf i/os are dc blocked, making it an ideal linear gain block or driver for hmc smt mixers. the hmc451lc3 allows the use of surface mount manufacturing techniques. gain: 19 db saturated power: +21 dbm @ 21% pae output ip3: +30 dbm single supply: +5v @ 114 ma 50 ohm matched input/output rohs compliant 3 x 3 mm smt package electrical speci cations, t a = +25 c, vdd 1 = vdd 2 = +5v typical applications the hmc451lc3 is ideal for use as a medium power ampli er for: ? microwave radio & vsat ? military & space ? test equipment & sensors ? fiber optics ? lo driver for hmc mixers parameter min. typ. max. min. typ. max. min. typ. max. units frequency range 5 -15 15 - 18 18 - 20 ghz gain 16 19 15 18 14 17 db gain variation over temperature 0.015 0.025 0.015 0.025 0.015 0.025 db/ c input return loss 13 13 12 db output return loss 12 8 8 db output power for 1 db compression (p1db) 16.5 19.5 16 19 16.5 19.5 dbm saturated output power (psat) 21 20.5 21 dbm output third order intercept (ip3) 32 29 29 dbm noise figure 7 6.5 7 db supply current (idd) 114 114 114 ma
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 127 input return loss vs. temperature output return loss vs. temperature broadband gain & return loss gain vs. temperature p1db vs. temperature psat vs. temperature -20 -15 -10 -5 0 5 10 15 20 25 3 5 7 9 11 13 15 17 19 21 23 25 s21 s11 s22 response (db) frequency (ghz) 0 4 8 12 16 20 24 4 6 8 10121416182022 +25c +85c -40c gain (db) frequency (ghz) -20 -15 -10 -5 0 4 6 8 10121416182022 +25c +85c -40c return loss (db) frequency (ghz) -20 -15 -10 -5 0 4 6 8 10121416182022 +25c +85c -40c return loss (db) frequency (ghz) 0 4 8 12 16 20 24 28 4 6 8 10121416182022 +25c +85c -40c p1db (dbm) frequency (ghz) 0 4 8 12 16 20 24 28 4 6 8 10121416182022 +25c +85c -40c psat (dbm) frequency (ghz) hmc451lc3 v04.1208 gaas phemt mmic medium power amplifier, 5 - 20 ghz
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 128 power compression @ 10 ghz output ip3 vs. temperature noise figure vs. temperature gain, p1db & psat vs. supply voltage @ 11 ghz reverse isolation vs. temperature power compression @ 20 ghz 0 4 8 12 16 20 24 -18-16-14-12-10-8-6-4-20246 pout (dbm) gain (db) pae (%) pout (dbm), gain (db), pae (%) input power (dbm) 0 4 8 12 16 20 24 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 pout (dbm) gain (db) pae (%) pout (dbm), gain (db), pae (%) input power (dbm) 16 20 24 28 32 36 40 4 6 8 10121416182022 +25c +85c -40c ip3 (dbm) frequency (ghz) -60 -50 -40 -30 -20 -10 0 4 6 8 10121416182022 +25c +85c -40c isolation (db) frequency (ghz) 0 1 2 3 4 5 6 7 8 9 10 11 4 6 8 10121416182022 +25c +85c -40c noise figure (db) frequency (ghz) hmc451lc3 v04.1208 gaas phemt mmic medium power amplifier, 5 - 20 ghz 16 17 18 19 20 21 22 4.5 5 5.5 gain p1db psat gain (db), p1db (dbm), psat (dbm) vdd (volts)
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 129 outline drawing absolute maximum ratings drain bias voltage (vdd 1 = vdd 2 ) +5.5 vdc rf input power (rfin)(vdd = +5vdc) +10 dbm channel temperature 175 c continuous pdiss (t = 85 c) (derate 12.4 mw/c above 85 c) 1.1 w thermal resistance (channel to ground paddle) 80 c/w storage temperature -65 to +150 c operating temperature -40 to +85 c vdd 1 = vdd 2 (v) idd 1 = idd 2 (ma) + 4. 5 111 +5.0 114 +5.5 116 note: ampli er will operate over full voltage range shown above notes: 1. package body material: alumina 2. lead and ground paddle plating: 30-80 microinches gold over 50 microinches minimum nickel 3. dimensions are in inches [millimeters]. 4. lead spacing tolerance is non-cumulative 5. package warp shall not exceed 0.05mm datum -c- 6. all ground leads and ground paddle must be soldered to pcb rf ground. typical supply current vs. vdd 1 = vdd 2 electrostatic sensitive device observe handling precautions hmc451lc3 v04.1208 gaas phemt mmic medium power amplifier, 5 - 20 ghz
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 130 pin descriptions pin number function description interface schematic 1, 2, 4 - 9, 11, 12, 14, 15 n/c this pin may be connected to rf/dc ground. performance will not be affected. 3rfin this pin is ac coupled and matched to 50 ohms from 5 - 20 ghz. 10 rfout this pin is ac coupled and matched to 50 ohms from 5 - 20 ghz. 13 vdd2 power supply voltage for the ampli er. external bypass capacitors of 100 pf, 1,000 pf and 2.2 f are required. 16 vdd1 power supply voltage for the ampli er. external bypass capacitors of 100 pf, 1,000 pf and 2.2 f are required. gnd package bottom must be connected to rf/dc ground. component value c1, c2 100 pf c3, c4 1,000 pf c5, c6 2.2 f application circuit hmc451lc3 v04.1208 gaas phemt mmic medium power amplifier, 5 - 20 ghz
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 131 evaluation pcb the circuit board used in the nal application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be con- nected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb 111667 [1] item description j1 - j2 pcb mount sma connector j3 - j5 dc pin c1, c2 100 pf capacitor, 0402 pkg. c3, c4 1000 pf capacitor, 0603 pkg. c5, c6 2.2 f capacitor, tantalum u1 hmc451lc3 ampli er pcb [2] 111665 evaluation pcb, 10 mils [1] reference this number when ordering complete evaluation pcb [2] circuit board material: rogers 4350 hmc451lc3 v04.1208 gaas phemt mmic medium power amplifier, 5 - 20 ghz
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